BUL216

Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

product image

BUL216 Picture
SeekIC No. : 00205814 Detail

BUL216: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

floor Price/Ceiling Price

US $ .66~.8 / Piece | Get Latest Price
Part Number:
BUL216
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.8
  • $.76
  • $.69
  • $.66
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 800 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 12 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Packaging : Tube
Package / Case : TO-220
Collector- Emitter Voltage VCEO Max : 800 V
Emitter- Base Voltage VEBO : 9 V
DC Collector/Base Gain hfe Min : 12


Features:

*SGS-THOMSONPREFERREDSALESTYPE
*NPNTRANSISTOR
*HIGHVOLTAGECAPABILITY
*VERYHIGHSWITCHINGSPEED
*HIGHOPERATINGJUNCTION TEMPERATURE
*HIGHRUGGEDNESS



Application

*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING
*SWITCHMODEPOWERSUPPLIES



Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE= 0) 1600 V
VCEO Collector-Emitter Voltage (IB= 0)
800 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
IC Collector Current 4 A
ICM Collector Peak Current (tP<5 ms) 6 A
IB Base Current 2 A
IBM Base Peak Current (tP<5 ms) 4 A
Ptot Total Dissipation at Tc = 25 90 W
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150



Description

The BUL216 is manufactured using high voltage Multiepitaxial Mesatechnologyforcost-effective high performance.It uses a Hollow Emitter structure toenhance switching speeds.
The BUL series BUL216 is designed fo ruse in lighting applications andl ow costs witch-mode power supplies.


Parameters:

Technical/Catalog InformationBUL216
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)800V
Current - Collector (Ic) (Max)4A
Power - Max90W
DC Current Gain (hFE) (Min) @ Ic, Vce12 @ 400mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
Frequency - Transition-
Current - Collector Cutoff (Max)250A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUL216
BUL216
497 2638 5 ND
49726385ND
497-2638-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Circuit Protection
Connectors, Interconnects
Fans, Thermal Management
Semiconductor Modules
Power Supplies - Board Mount
Discrete Semiconductor Products
View more