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BUL416

Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

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SeekIC No. : 00212147 Detail

BUL416: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

BUL416 Data Sheet

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Part Number:
BUL416
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 800 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 10 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 6 A
Collector- Emitter Voltage VCEO Max : 800 V
DC Collector/Base Gain hfe Min : 10
Emitter- Base Voltage VEBO : 9 V


Features:

*SGS-THOMSONPREFERREDSALESTYPE
*NPNTRANSISTOR
*HIGHVOLTAGECAPABILITY
  VERYHIGHSWITCHINGSPEED
*FULLYCHARACTERISEDAT125
  LOWSPREADOFDYNAMICPARAMETERS


Application

ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES


Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE= 0) 1600 V
VCEO Collector-Emitter Voltage (IB= 0)
 800 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
IC Collector Current 6 A
ICM Collector Peak Current (tP<5 ms) 9 A
IB Base Current 5 A
IBM Base Peak Current (tP<5 ms) 8 A
Ptot Total Dissipation at Tc = 25 110 W
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150



Description

TheBUL416ismanufacturedusinghighvoltage MultiepitaxialMesatechnologyforcost-effective highperformance.ItusesaHollowEmitter structuretoenhanceswitchingspeeds.
TheBULseries BUL416 isdesignedforuseinlighting applicationsandlowcostswitch-modepower supplies.


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