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BUL53BSMD

Features: *Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.*Ion implant and high accuracy masking for tight control of characteristics from batch to batch.*Triple Guard Rings for improved co...

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SeekIC No. : 004304527 Detail

BUL53BSMD: Features: *Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.*Ion implant and high accuracy ...

BUL53BSMD Data Sheet

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Part Number:
BUL53BSMD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

*Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.
*Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
*Triple Guard Rings for improved control of high voltages.


Specifications

VCBO Collector -Base Voltag 500V
VCEO Collector -Emitter Voltage ( IB= 0) 250V
VEBO Emitter -Base Voltage (IC = 0)
C		 10V
IC Collector Current 12A
IC(PK) Peak Collector Current 20A
IB Base Current 3A
PD Power Dissipation 60W
R? Thermal Impedance (when mounted on thermally conducting PCB) 3.0/W
Tj Maximum Junction Temperature 200
Tstg Storage Temperature Range -55 to +200!



Description

The BUL53BSMD feayures are as follows:
*SEMEFAB DESIGNED AND DIFFUSED DIE
*HIGH VOLTAGE
*FAST SWITCHING
*HIGH ENERGY RATING


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