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BUL56B

Features: Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.Ion implant and high accuracy masking for tight control of characteristics from batch to batch.Triple Guard Rings for improved contr...

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SeekIC No. : 004304536 Detail

BUL56B: Features: Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.Ion implant and high accuracy ma...

BUL56B Data Sheet

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Part Number:
BUL56B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.




Specifications

VCBO Collector-Base Voltage(IE=0) 250V
VCEO Collector-Emitter Voltage(IB=0) 100V
VEBO Emitter-Base Voltage(IC=0) 10V
IC Continuous Collector Current 18A
IC(PK) Peak Collector Current 25A
IB Base Current 5A
Ptot Total Dissipation at Tcase=25 85W
Tstg Operating and Storage Temperature Range -55 to +150





Description

The BUL56B features are as follows:

*SEMEFAB DESIGNED AND DIFFUSED DIE
*HIGH VOLTAGE
*FAST SWITCHING
*HIGH ENERGY RATING




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