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BUL58BSMD

Features: *Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.*Ion implant and high accuracy masking fo tight control of characteristics from batch batch.*Triple Guard Rings for improved contro...

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SeekIC No. : 004304543 Detail

BUL58BSMD: Features: *Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.*Ion implant and high accuracy ...

BUL58BSMD Data Sheet

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Part Number:
BUL58BSMD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

*Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.
*Ion implant and high accuracy masking fo tight control of characteristics from batch batch.
*Triple Guard Rings for improved control of high voltages.


Specifications

VCBO Collector -C Base Voltag 180V
VCEO Collector -C Emitter Voltage (IB = 0) 90V
VEBO Emitter -C Base Voltage (IC = 0)
 10V
IC Collector Current 7A

I C(PK)

 Peak Collector Current 10A
I B Base Current 2A
Ptot Total Dissipation at Tcase = 25
Derate above 25 when used on efficient heatsin		 50W
0.28W/
Tstg Operating and Storage Temperature Range -C65 to 200



Description

The BUL58BSMD features are as follows:
*SEMEFAB DESIGNED AND DIFFUSED
*HIGH VOLTAGE
*FAST SWITCHING
*HIGH ENERGY RATING




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