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BUL642D2G

Transistors Bipolar (BJT) BIP NPN 3A 825V

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SeekIC No. : 00211475 Detail

BUL642D2G: Transistors Bipolar (BJT) BIP NPN 3A 825V

BUL642D2G Data Sheet

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Part Number:
BUL642D2G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 440 V
Emitter- Base Voltage VEBO : 11 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 16 Configuration : Single
Maximum Operating Frequency : 13 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Rail    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Maximum DC Collector Current : 3 A
Packaging : Rail
Maximum Operating Frequency : 13 MHz
DC Collector/Base Gain hfe Min : 16
Collector- Emitter Voltage VCEO Max : 440 V
Emitter- Base Voltage VEBO : 11 V


Parameters:

Technical/Catalog InformationBUL642D2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUL642D2G
BUL642D2G



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