BUL742C

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Collector- Emitter Voltage VCEO Max : 400 V
Package / Case : TO-220AB
Packaging : Tube
Emitter- Base Voltage VEBO : 12 V
DC Collector/Base Gain hfe Min : 48


Features:

· HIGH VOLTAGE CAPABILITY
· LOW SPREAD OF DYNAMIC PARAMETERS
· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
· VERY HIGH SWITCHING SPEED


Application

· ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING
· SWITCH MODE POWER SUPPLIES


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE = 0)	1050	V
VCEO	Collector-Emitter Voltage (IB = 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0, IB < 2 A, tp < 10 ms)	V(BR)EBO	V
IC	Collector Current	4	A
ICM	Collector Peak Current (tp < 5 ms)	8	A
IB	Base Current	2	A
IBM	Base Peak Current (tp < 5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	70	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

BUL742C is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

Thanks to an increased intermediate layer, BUL742C has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.