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BUL770

Features: *Designed Specifically for High FrequencyElectronic Ballasts up to 50 W*hFE7 to 21 at VCE=1 V, IC= 800 mA*Low Power Losses (On-state and Switching) *Key Parameters Characterised at High Temperature *Tight and Reproducible Parametric DistributionsSpecifications RATING SYMBOL VALUE ...

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SeekIC No. : 004304565 Detail

BUL770: Features: *Designed Specifically for High FrequencyElectronic Ballasts up to 50 W*hFE7 to 21 at VCE=1 V, IC= 800 mA*Low Power Losses (On-state and Switching) *Key Parameters Characterised at High Te...

BUL770 Data Sheet

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Part Number:
BUL770
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

*Designed Specifically for High Frequency Electronic Ballasts up to 50 W
*hFE 7 to 21 at VCE =1 V, IC= 800 mA
*Low Power Losses (On-state and Switching)
*Key Parameters Characterised at High Temperature
*Tight and Reproducible Parametric Distributions 


Specifications

RATING SYMBOL VALUE UNIT

Collector-emitter voltage (VBE=0)
 VCES 700 V

Collector-base voltage (IBE=0)		 VCBO 700 V

Collector-emitter voltage (IB=0)
 VCEO 400 V
Emitter-base voltage VEBO 9 V
Continuous collector current IC 2.5 A
Peak collector current (see Note 1) ICM 6 A
Peak collector current (see Note 2) ICM 8 A
Continuous base current IB 1.5 A
Peak base current (see Note 2) IBM 2.5 A
Continuous device dissipation at (or below) 25 case temperatue Ptot 50 W
Operating junction temperature range Tj -65 to +150
Storage temperature range Tstg -65 to +150



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