BUL804

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Packaging : Tube
Emitter- Base Voltage VEBO : 8 V
Package / Case : TO-220
DC Collector/Base Gain hfe Min : 10
Collector- Emitter Voltage VCEO Max : 450 V


Features:

*NPN TRANSISTOR
*HIGH VOLTAGE CAPABILITY
*LOW SPREAD OF DYNAMIC PARAMETERS
*MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
*VERY HIGH SWITCHING SPEED


Application

*DEDICATED FOR PFC SOLUTION IN  HALF-BRIDGE VOLTAGE FED TOPOLOGY
*ELECTRONIC BALLAST FOR  FLUORESCENT LIGHTING


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	800	V
VCEO	Collector-Emitter Voltage (IB= 0)	450	V
VEBO	Emitter-Base Voltage (IC = 0)	8	V
IC	Collector Current	4	A
ICM	Collector Peak Current (tP<5 ms)	8	A
IB	Base Current	2	A
IBM	Base Peak Current (tP<5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	70	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

BUL804 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

BUL804 uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

BUL804 is designed for use as PFC in high frequency ballast half Bridge voltage fed topology.