BUL903ED

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Package / Case : TO-220AB
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 20
Maximum DC Collector Current : 5 A


Features:

*INTEGRATEDANTISATURATIONAND PROTECTIONNETWORK
*INTEGRATEDANTIPARALLELCOLLECTOR EMITTERDIODE
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED
*ARCINGTESTSELFPROTECTED


Application

*LAMPELECTRONICBALLASTFOR FLUORESCENTLIGHTINGUSING277V HALFBRIDGECURRENT-FED CONFIGURATION


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	900	V
VCEO	Collector-Emitter Voltage (IB= 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	7	V
IC	Collector Current	5	A
ICM	Collector Peak Current (tP<5 ms)	8	A
IB	Base Current	2	A
IBM	Base Peak Current (tP<5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	70	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BUL903ED is manufacturedusinghigh voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

BUL903ED has been designed in order to operate without baker clamp and transil protection.This enables saving from 2 up to 10 components in the application.