BULB128D-1

Features:

*STMicroelectronics PREFERRED SALESTYPE
*NPN TRANSISTOR
*HIGH VOLTAGE CAPABILITY
*LOW SPREAD OF DYNAMIC PARAMETERS
*MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
*VERY HIGH SWITCHING SPEED
*INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE


Application

*ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
*FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	700	V
VCEO	Collector-Emitter Voltage (IB= 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	V(BR)EBO	V
IC	Collector Current	4	A
ICM	Collector Peak Current (tP<5 ms)	8	A
IB	Base Current	2	A
IBM	Base Peak Current (tP<5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	70	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

BULB128D-1 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

BULB128D-1 uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

BULB128D-1 is designed for use in lighting applications and low cost switch-mode power supplies.