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BULD1101ET4

Transistors Bipolar (BJT) Hi Vltg Fast Swtchng NPN Pwr Transistor

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SeekIC No. : 00212829 Detail

BULD1101ET4: Transistors Bipolar (BJT) Hi Vltg Fast Swtchng NPN Pwr Transistor

BULD1101ET4 Data Sheet

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Part Number:
BULD1101ET4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Emitter- Base Voltage VEBO : 12 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 20 Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Reel    

Description

Configuration :
Maximum Operating Frequency :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 20
Emitter- Base Voltage VEBO : 12 V
Collector- Emitter Voltage VCEO Max : 450 V


Features:

· HIGH VOLTAGE CAPABILITY
· LOW SPREAD OF DYNAMIC PARAMETERS
· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
· VERY HIGH SWITCHING SPEED
· LARGE RBSOA
· SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")


Application

· ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING


Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1100 V
VCEO Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 12 V
IC Collector Current 3 A
ICM Collector Peak Current (tp <5 ms) 6 A
IB Base Current 1.5 A
IBM Base Peak Current (tp <5 ms) 3 A
Ptot Total Dissipation at Tc = 25 35 W
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150



Description

BULD1101ET4 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.




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