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BUP212

IGBT Transistors IGBT 2200V, 22A

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SeekIC No. : 00143690 Detail

BUP212: IGBT Transistors IGBT 2200V, 22A

BUP212 Data Sheet

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Part Number:
BUP212
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-220AB-3


Features:

*Low forward voltage drop
*Low tail current
*Latch-up free
*Avalanche rated


Pinout

Connection Diagram


Specifications

Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Emitter-collector voltage VEC
Collector-gate voltage
RGE=20k		 VCGR 1200
Gate-emitter voltage VGE ±20
DC collector current
TC=25
TC=110		 IC 22
8		 A
Pulsed collector current, tp=1ms
TC=25
TC=110		 ICpuls 44
16
Avalanche energy, single pulse
IC=8A, VCC=50V, RGE=25
L=300H, Tj=25		 EAS 10 mJ
Power dissipation
TC=25		 Ptot 125 W
Chip or operating temperature Tj -55...+150
Storage temperature Tstg -55...+150
DIN humidity category, DIN 40 040 - E -
IEC climatic category, DIN IEC 68-1 - 55/150/56



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