BUP311D Selling Leads, Price trend , Infineon Technologies, BUP311D DataSheet download, circuit diagram from SeekIC.com

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BUP311D: IGBT Transistors 1200V, 20A

BUP311D Data Sheet

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Part Number:: BUP311D
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	1200 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-218AB-3	Packaging :	Tube

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-218AB-3

Features:

*Low forward voltage drop
*High switching speed
*Low tail current
*Latch-up free
*Including fast free-wheel diode

Pinout

Connection Diagram

Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1200	V
Collector-gate voltage R_GE=20K	V_CGR	1200
Gate-emitter voltage	V_GE	±20
DC collector current T_C=25 T_C=100	I_C	20 12	A
Pulsed collector current, t_p=1 ms T_C=25	I_Cpuls	40
Diode forward current T_C=100	I_F	tbd
Pulsed diode current, t_p=1ms T_C=25	I_Fpuls	tbd
Power dissipation T_C=25	P_tot	125	W
Chip or operating temperature	T_j	-55...+150
Storage temperature	T_stg	-55...+150
Chip or operating temperature	T_j	-55...+150
Storage temperature	T_stg	-55...+150
IEC climatic category, DIN IEC 68-1	-	55/150/56	-

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BUP311D

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