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BUP311D

IGBT Transistors 1200V, 20A

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SeekIC No. : 00143844 Detail

BUP311D: IGBT Transistors 1200V, 20A

BUP311D Data Sheet

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Part Number:
BUP311D
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-218AB-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-218AB-3


Features:

*Low forward voltage drop
*High switching speed
*Low tail current
*Latch-up free
*Including fast free-wheel diode


Pinout

Connection Diagram


Specifications

 Parameter  Symbol  Values  Unit
 Collector-emitter voltage  VCE  1200  V
 Collector-gate voltage
 RGE=20K		  VCGR  1200
 Gate-emitter voltage  VGE  ±20
 DC collector current
 TC=25
 TC=100		  IC  20
 12		  A
  Pulsed collector current, tp=1 ms
TC=25		  ICpuls  40
 Diode forward current
 TC=100		  IF  tbd
  Pulsed diode current, tp=1ms
 TC=25		  IFpuls  tbd
 Power dissipation
 TC=25		  Ptot  125  W
  Chip or operating temperature  Tj  -55...+150  
 Storage temperature  Tstg  -55...+150
Chip or operating temperature  Tj  -55...+150  
Storage temperature  Tstg  -55...+150
 IEC climatic category, DIN IEC 68-1  -  55/150/56  -



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