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BUP313

IGBT Transistors LOW LOSS IGBT 1200V 15A

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BUP313: IGBT Transistors LOW LOSS IGBT 1200V 15A

BUP313 Data Sheet

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Part Number:
BUP313
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-218-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-218-3


Features:

*Low forward voltage drop
*High switching speed
*Low tail current
*Latch-up free
*Avalanche rated


Pinout

Connection Diagram


Specifications

Parameter Symbol Values Unit
 Collector-emitter voltage  VCE  1200  V
 Collector-gate voltage
 RGE=20k		  VCGR  1200
 Gate-emitter voltage  VGE  ±20
 DC collector current
 TC=25
 TC=90		  IC  32 
 20		  A
 Pulsed collector current,    tp=1ms
TC=25
TC=90		  ICPUls

 64
 40

 Avalanche energy, single pulse
IC=10A, VCC=24V, RGE=25
L=200UH,  Tj=25		  EAS  22  mJ
 Power dissipation
TC=25		  Ptot  200  W
 Chip or operating temperature  Tj  -55...+150  
 Storage temperature  Tstg  -55...+150
 DIN humidity category,  DIN40 040  -  E  -
 IEC climatic category,
DIN IEC 68-1		  -  55/150/56



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