Purchase BUP314D, In-stock BUP314D From SeekIC.
Package Cooled:TO-3P D/C:09+
- Table of contents:
BUP314D
-
Suppliers
DataSheet
General Description
BUP314D Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Collector-emitter voltage | VCE | 1200 | V |
| Collector-gate voltage RGE= 20 kΩ |
VCGR | 1200 | |
| Gate-emitter voltage | VGE | ± 20 | |
| DC collector current, (limited by bond wire) TC= 60 °C TC= 90 °C |
C | 33 42 |
A |
| Pulsed collector current,tp= 1 ms TC= 25 °C TC= 90 °C |
Cpuls | 66 84 | |
| Diode forward current TC= 90 °C |
F | 28 | |
| Pulsed diode current,tp= 1 ms TC= 25 °C |
Fpuls | 168 | |
| Power dissipation TC= 25 °C |
Ptot | 300 | W |
| Chip or operating temperature | Tj | -55 ... + 150 | °C |
| Storage temperature | Tstg | -55 ... + 150 |
BUP314D Features
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
BUP314D
PDF/DataSheet Download
- Datasheet: BUP314D
- File Size: 107816 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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