BUP314D Selling Leads, Price trend , Infineon Technologies, BUP314D DataSheet download, circuit diagram from SeekIC.com

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BUP314D: IGBT Transistors LOW LOSS DuoPack 1200V 25A

BUP314D Data Sheet

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Part Number:: BUP314D
Mfg:: Infineon Technologies
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/4/27

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BUP302 evaluate
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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	1200 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-218-3	Packaging :	Tube

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-218-3

Features:

• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode

Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1200	V
Collector-gate voltage R_GE= 20 kΩ	V_CGR	1200
Gate-emitter voltage	V_GE	± 20
DC collector current, (limited by bond wire) T_C= 60 °C T_C= 90 °C	C	33 42	A
Pulsed collector current,t_p= 1 ms T_C= 25 °C T_C= 90 °C	C_puls	66 84
Diode forward current T_C= 90 °C	F	28
Pulsed diode current,t_p= 1 ms T_C= 25 °C	F_puls	168
Power dissipation T_C= 25 °C	P_tot	300	W
Chip or operating temperature	T_j	-55 ... + 150	°C
Storage temperature	T_stg	-55 ... + 150	°C

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BUP314D

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