BUT11A

Transistors Bipolar (BJT) NPN Si Transistor

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SeekIC No. : 00205144 Detail

BUT11A: Transistors Bipolar (BJT) NPN Si Transistor

floor Price/Ceiling Price

US $ .38~.71 / Piece | Get Latest Price
Part Number:
BUT11A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.71
  • $.62
  • $.52
  • $.38
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/7/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 5 A
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Bulk    

Description

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 5 A
Packaging : Bulk
Package / Case : TO-220
Emitter- Base Voltage VEBO : 9 V
Collector- Emitter Voltage VCEO Max : 450 V


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage
:BUT11
:BUT11A

850
1000
V
VCEO Collector-Emitter Voltage
:BUT11
:BUT11A

400
450
V
VEBO Emitter-Base Voltage 9 V
IC Collector Current (DC) 5 A
ICP *Collector Current (Pulse) 10 A
IB Base Current (DC) 2 A
IBP *Base Current (Pulse) 4 A
PC

Collector Dissipation TC= 25

100 W
TJ Junction Temperature 150
TSTG Storage Temperature -65~150





Description

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT of BUT11A TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES BUT11A CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.




Parameters:

Technical/Catalog InformationBUT11A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)450V
Current - Collector (Ic) (Max)5A
Power - Max100W
DC Current Gain (hFE) (Min) @ Ic, Vce-
Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 3A
Frequency - Transition-
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUT11A
BUT11A



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