Purchase BUV98V, In-stock BUV98V From SeekIC.
MFG:ST Package Cooled:MODULE D/C:N/A
- Table of contents:
BUV98V
-
Suppliers
DataSheet
General Description
BUV98V Maximum Ratings
| Symbol | Parameter | Value | Unit |
| VCEV | Collector-Emitter Voltage (VBE = -5 V) | 1000 | V |
| VCEO(sus) | Collector-Emitter Voltage (IB = 0) | 450 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | 7 | V |
| IC | Collector Current | 30 | A |
| ICM | Collector Peak Current (tp = 10 ms) | 60 | A |
| IB | Base Current | 8 | A |
| IBM | Base Peak Current (tp = 10 ms) | 16 | A |
| Ptot | Total Dissipation at Tc = 25 oC | 150 | W |
| Tstg | Storage Temperature | -55 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 | |
| VISO | Insulation Withstand Voltage (AC-RMS) | 2500 |
BUV98V Features
· HIGH CURRENTPOWER BIPOLAR MODULE
· VERY LOW Rth JUNCTION CASE
· SPECIFIED ACCIDENTAL OVERLOAD AREAS
· ISOLATED CASE (2500V RMS)
· EASY TO MOUNT
·LOW INTERNAL PARASITIC INDUCTANCE
BUV98V Typical Application
·MOTOR CONTROL
·SMPS & UPS
· WELDING EQUIPMENT
·SMPS & UPS
· WELDING EQUIPMENT
BUV98V
PDF/DataSheet Download
- Datasheet: BUV98V
- File Size: 105078 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
- ·BUV10N
- SEME-LAB [Seme LAB]
- Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
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- ·BUV11
- MOTOROLA [Motorola, Inc]
- 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS
- 141446 KB
- ·BUV11/D
- 20 AMPERES NPN SILICON
- 141446 KB
- ·BUV12
- SEME-LAB [Seme LAB]
- Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
- 11227 KB
- ·BUV20
- MOTOROLA [Motorola, Inc]
- 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS
- 64362 KB
- ·BUV20/D
- 50 AMPERES NPN SILICON
- 146312 KB
- ·BUV20D
- ONSEMI [ON Semiconductor]
- SWITCHMODE Series NPN Silicon Power Transistor
- 11221 KB
- ·BUV21
- MOTOROLA [Motorola, Inc]
- 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS
- 143117 KB
BUV98V Relative Products
BUV98AV
BUV89
BUV83
BUV82
BUV70
The BUV70 features are as follows :·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 600V (Min)·High Power Dissipation·Fast Switching Speed
BUV61
The BUV61 is a Multi-Epitaxial planar NPN transistor in TO-3 metal case.BUV61 is intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.
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