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Package Cooled:TO-247  D/C:NEW  

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Part Number: BUW11W

 

 

Package Cooled: TO-247

D/C: NEW

Description: High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package.


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BUW11W General Description


High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package.

BUW11W Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value
BUW11F
BUW11AF
VBE = 0 -
-

850
1000
V
V
VCEO Collector-emitter voltage
BUW11F
BUW11AF
open base -
-
400
450
V
V
ICsat collector saturation current
BUW11F
BUW11AF
-
-
3
2.5
A
A
IC base current (DC) see Figs 2 and 4 - 5 A
ICM base current (peak value) tp < 2 ms; see Fig2 - 10 A
IB base current (DC)   -   A
IBM base current (peak value) tp < 2 ms -   A
Ptot total power dissipation Tmb 25 °C; see Fig.3 - 32 W
Tstg storage temperature   -65 0.8
Tj junction temperature   -  

BUW11W Typical Application

· Converters
· Inverters
· Switching regulators
· Motor control systems.

BUW11W datasheet

BUW11W
PDF/DataSheet Download

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BUW11W Relative Products

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    High-voltage, high-speed, glass-passivated NPN power transistor BUW11F in a SOT199 package.

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    BUW11AW

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  • BUW11AF

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