Purchase BUW12A, In-stock BUW12A From SeekIC.
MFG:PHILIPS Package Cooled:TO-3P D/C:05+
Part Number: BUW12A
MFG: PHILIPS
Package Cooled: TO-3P
D/C: 05+
Description: ·With TO-3PN package ·High voltage,fast speed ·Low collector saturation voltage
- Table of contents:
BUW12A
-
Suppliers
DataSheet
General Description
BUW12A General Description
·With TO-3PN package
·High voltage,fast speed
·Low collector saturation voltage
BUW12A Maximum Ratings
|
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT | |
|
VCBO |
Collector-base voltage |
BUW12 |
Open emitter |
850 |
V |
|
BUW12A |
1000 | ||||
|
VCEO |
Collector-emitter voltage |
BUW12 |
Open base |
400 |
V |
|
BUW12A |
450 | ||||
|
VEBO |
Emitter-base voltage |
Open collector |
9 |
V | |
|
IC |
Collector current |
8 |
A | ||
|
ICM |
Collector current-peak |
20 |
A | ||
|
IB |
Base current |
4 |
A | ||
|
PD |
Total power dissipation |
TC =25 |
125 |
W | |
|
Tj |
Junction temperature |
150 |
|||
|
Tstg |
Storage temperature |
-65~175 |
|||
BUW12A Typical Application
·Specially intended for operating In industrial applications
BUW12A
PDF/DataSheet Download
- Datasheet: BUW12A
- File Size: 75999 KB
- Manufacturer: ANALOGICTECH [Advanced Analogic Technologies]
- Click here to Download
- ·BUW1015
- STMICROELECTRONICS [STMicroelectronics]
- HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
- 211707 KB
- ·BUW11
- ANALOGICTECH [Advanced Analogic Technologies]
- POWER TRANSISTORS
- 75999 KB
- ·BUW11A
- ANALOGICTECH [Advanced Analogic Technologies]
- POWER TRANSISTORS
- 75999 KB
- ·BUW11AF
- PHILIPS [Philips Semiconductors]
- Silicon diffused power transistors
- 90590 KB
- ·BUW11AW
- PHILIPS [Philips Semiconductors]
- Silicon diffused power transistors
- 81150 KB
- ·BUW11F
- PHILIPS [Philips Semiconductors]
- Silicon diffused power transistors
- 90590 KB
- ·BUW11W
- PHILIPS [Philips Semiconductors]
- Silicon diffused power transistors
- 81150 KB
- ·BUW12
- ANALOGICTECH [Advanced Analogic Technologies]
- POWER TRANSISTORS
- 75999 KB
BUW12A Relative Products
BUW1215
The BUW1215 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
BUW12
The BUW12 features are as follows:·With TO-3PN package ·High voltage,fast speed ·Low collector saturation voltage
BUW11W
High-voltage, high-speed, glass-passivated NPN power transistor BUW11W in a SOT429 package.
BUW11F
High-voltage, high-speed, glass-passivated NPN power transistor BUW11F in a SOT199 package.
BUW11AW
High-voltage, high-speed, glass-passivated NPN power transistor BUW11AW in a SOT429 package.
BUW11AF
High-voltage, high-speed, glass-passivated NPN power transistor BUW11AFin a SOT199 package.
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