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Package Cooled:TO-247  D/C:NEW  

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Part Number: BUW12W

 

 

Package Cooled: TO-247

D/C: NEW

Description: High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package.


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BUW12W General Description


High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package.

BUW12W Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value
BUW12F
BUW12AF
VBE = 0 -
-

850
1000
V
V
VCEO Collector-emitter voltage
BUW12F
BUW12AF
open base -
-
400
450
V
V
IC base current (DC) see Figs 2 and 4 - 8 A
ICM base current (peak value) tp < 2 ms; see Fig.2 - 20 A
IB base current (DC)   - 4 A
IBM base current (peak value) tp 2 ms - 6 A
Ptot total power dissipation Tmb 25 °C; see Fig.3 - 125 W
Tstg storage temperature   -65 +150
Tj junction temperature   - 150

BUW12W Typical Application

· Converters
· Inverters
· Switching regulators
· Motor control systems.

BUW12W datasheet

BUW12W
PDF/DataSheet Download

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BUW12W Relative Products

  • BUW12F

    BUW12F

    High-voltage, high-speed, glass-passivated NPN power transistor BUW12Fin a SOT199 package.

  • BUW12AW

    BUW12AW

    High-voltage, high-speed, glass-passivated NPN power transistor BUW12AW in a SOT429 package.

  • BUW12AF

    BUW12AF

    High-voltage, high-speed, glass-passivated NPN power transistor BUW12AF in a SOT199 package.

  • BUW12A

    BUW12A

    The BUW12A features are as follows:·With TO-3PN package ·High voltage,fast speed ·Low collector saturation voltage

  • BUW1215

    BUW1215

    The BUW1215 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.

  • BUW12

    BUW12

    The BUW12 features are as follows:·With TO-3PN package ·High voltage,fast speed ·Low collector saturation voltage

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