BUX85

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
DC Collector/Base Gain hfe Min : 30
Maximum Operating Frequency : 4 MHz (Min)
Maximum DC Collector Current : 2 A
Collector- Emitter Voltage VCEO Max : 450 V


Specifications

Rating	Symbol	BUX84	BUX85	Unit
CollectorEmitter Voltage	VCEO(sus)	400	450	Vdc
CollectorEmitter Voltage	VCES	800	1000	Vdc
EmitterBase Voltage	VEBO	5	5	Vdc
Collector Current - Continuous - Peak (1)	IC ICM	2 3.0	2 3.0	mAdc
Base Current - Continuous - Peak (1)	IB IBM	0.75 1.0	0.75 1.0	Watts W/
Reverse Base Current - Peak	IBM	1	1
Total Device Dissipation @ TC = 25°CDerate above 25°C	PD	50 400	50 400	Watts mW/°C
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +150	65 to +150

Parameters:

Technical/Catalog Information	BUX85
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	450V
Current - Collector (Ic) (Max)	2A
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic	800mV @ 30mA, 300mA
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	200A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BUX85 BUX85 BUX85OS ND BUX85OSND BUX85OS