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MFG:PHIL


Part Number: BUX86P
MFG: PHIL
Description: High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use i...
MFG:PHIL


MFG: PHIL
Description: High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use i...
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | |
| VCESM | Collector-emitter voltage peak value | VBE = 0 V | BUX | 86P | 87P | V |
| VCEO | Collector-emitter voltage (open base) | - | 800 400 |
1000 450 |
V | |
| VEBO | Emitter-base voltage (open collector) | - | 5 | V | ||
| IC | Collector current (DC) | - | 0.5 | A | ||
| ICM | Collector current (peak value) tp = 2 ms | - | 1 | A | ||
| IB | Base current (DC) | - | 0.2 | A | ||
| IBM | Base current (peak value) | - | 0.3 | A | ||
| -IBM | Reverse base current (peak value)1 | - | 0.3 | A | ||
| Ptot | Total power dissipation | Tmb 25 | - | 42 | W | |
| Tstg, | Storage temperature | -40 | 150 | |||
| Tj | Junction temperature | - | 150 | |||
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
BUX86P
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