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BUZ21

MOSFET N-CH 100V 21A TO-220AB

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SeekIC No. : 004304914 Detail

BUZ21: MOSFET N-CH 100V 21A TO-220AB

BUZ21 Data Sheet

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Part Number:
BUZ21
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• N channel
• Enhancement mode
• Avalanche-rated


Specifications

Parameter Symbol Values Unit
Continuous drain current
TC = 25		 ID 21 A
Pulsed drain current
TC = 25		 IDpuls 84
Avalanche current,limited by Tjmax IAR 21
Avalanche energy,periodic limited by Tjmax
 EAR 11 mJ
Avalanche energy, single pulse
ID = 21 A, VDD = 25 V, RGS = 25
L = 340 H, Tj = 25
 EAS 100
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25		 Ptot 75 W
Operating temperature Tj -55 ... + 150
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 1.67 K/W
Thermal resistance, chip to ambient RthJC 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56



Parameters:

Technical/Catalog InformationBUZ21
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs85 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds 1300pF @ 25V
Power - Max75W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusRequest Inventory Verification
RoHS StatusRequest Inventory Verification
Other Names BUZ21
BUZ21
BUZ21IN ND
BUZ21INND
BUZ21IN



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