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Part Number: BUZ30A

 

 

 

 

 

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BUZ30A Maximum Ratings

Parameter Symbol Values Unit
Continuous drain current
TC =26
ID 21 A
Pulsed drain current
TC = 25
IDpuls 84
Avalanche current,limited by Tjmax IAR 21
Avalanche energy,periodic limited by Tjmax
EAR

12

mJ

Avalanche energy, single pulse
ID =21A, VDD = 50 V, RGS = 25
L =1.53mH, Tj = 25

EAS 450
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25
Ptot 125 W
Operating temperature Tj -55 ... + 150
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 1 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

BUZ30A Features

• N channel
• Enhancement mode
• Avalanche-rated

BUZ30A datasheet

BUZ30A
PDF/DataSheet Download

  • Datasheet: BUZ30A
  • File Size: 113742 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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