Purchase BUZ332A, In-stock BUZ332A From SeekIC.
MFG:TOSHIBA Package Cooled:TO-3P D/C:1000
- Table of contents:
BUZ332A
-
Suppliers
DataSheet
General Description
BUZ332A Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 33 |
ID | 8 | A |
| Pulsed drain current TC = 25 |
IDpuls | 32 | |
| Avalanche current,limited by Tjmax | IAR | 8 | |
| Avalanche energy,periodic limited by Tjmax |
EAR | 13 | mJ |
| Avalanche energy, single pulse ID = 8 A, VDD = 50 V, RGS = 25 L = 16.3 mH, Tj = 25 |
EAS | 570 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 150 | W |
| Operating temperature | Tj | -55 ... + 150 | |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 0.83 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
BUZ332A Features
• N channel
• Enhancement mode
• Avalanche-rated
• Enhancement mode
• Avalanche-rated
BUZ332A
PDF/DataSheet Download
- Datasheet: BUZ332A
- File Size: 220492 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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