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BUZ71A

MOSFET TO-220 N-CH 50V 30A

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SeekIC No. : 00166016 Detail

BUZ71A: MOSFET TO-220 N-CH 50V 30A

BUZ71A Data Sheet

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Part Number:
BUZ71A
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 50 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220
Continuous Drain Current : 13 A
Drain-Source Breakdown Voltage : 50 V
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

• 13A, 50V
• rDS(ON) = 0.120
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

    BUZ71A UNITS
Drain to Source Breakdown Voltage (Note 1) VDS 50 V
Drain to Gate Voltage (RGS = 20k) (Note 1) VDGR 50 V
Continuous Drain Current, TC = 55 ID 13 A
Pulsed Drain Current (Note 3) IDM 48 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation PD 40 W
Single Pulse Avalanche Energy Rating (Note 4) EAS 100 mJ
Linear Derating Factor   0.32 W/
Operating and Storage Temperature TSTG, TJ -55 to 150
DIN Humidity Category - DIN 40040   E  
IEC Climatic Category - DIN IEC 68-1   55/150/56  
Leads at 0.063in (1.6mm) from Case for 10s TL 300
Package Body for 10s, See Techbrief 334 Tpkg 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




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