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Part Number: BUZ77B

 

 

 

 

 

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BUZ77B Maximum Ratings

Parameter Symbol Values Unit
Continuous drain current
TC =29
ID 2.9 A
Pulsed drain current
TC = 25
IDpuls 11.5
Avalanche current,limited by Tjmax IAR 2.7
Avalanche energy,periodic limited by Tjmax
EAR 5 mJ
Avalanche energy, single pulse
ID =2.7A, VDD = 50 V, RGS = 25
L =45.3 mH, Tj = 25
EAS 180
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25
Ptot 75 W
Operating temperature Tj -55 ... + 150
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 1.67 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

BUZ77B Features

• N channel
• Enhancement mode
• Avalanche-rated

BUZ77B datasheet

BUZ77B
PDF/DataSheet Download

  • Datasheet: BUZ77B
  • File Size: 179447 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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