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- Table of contents:
BUZ80A
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Suppliers
DataSheet
General Description
BUZ80A Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Drain source voltage | VDS | 800 | V |
| Drain-gate voltage RGS = 20 k |
VDGR | 800 | |
| Continuous drain current TC = 50 |
ID | 3 | A |
| Pulsed drain current TC = 25 |
IDpuls | 12 | |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 |
Ptot | 75 | W |
| Operating temperature | Tj | -55 ... + 150 | |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 1.67 | K/W |
| Thermal resistance, chip to ambient | RthJC | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
BUZ80A Features
• N channel
• Enhancement mode
• Enhancement mode
BUZ80A
PDF/DataSheet Download
- Datasheet: BUZ80A
- File Size: 180805 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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