BUZ900X4S

Features: • HIGH SPEED SWITCHING• NCHANNEL POWER MOSFET• SEMEFAB DESIGNED AND DIFFUSED• HIGH VOLTAGE (160V & 200V)• HIGH ENERGY RATING• ENHANCEMENT MODE• INTEGRAL PROTECTION DIODE• PCHANNEL ALSO AVAILABLESpecifications (Tcase = 25°C unless o...

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BUZ900X4S Picture
SeekIC No. : 004304989 Detail

BUZ900X4S: Features: • HIGH SPEED SWITCHING• NCHANNEL POWER MOSFET• SEMEFAB DESIGNED AND DIFFUSED• HIGH VOLTAGE (160V & 200V)• HIGH ENERGY RATING• ENHANCEMENT MODE•...

floor Price/Ceiling Price

Part Number:
BUZ900X4S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

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Product Details

Description



Features:

• HIGH SPEED SWITCHING
• NCHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• PCHANNEL ALSO AVAILABLE



Specifications

(Tcase = 25°C unless otherwise stated) BUZ900X4S BUZ901X4S
VDSX
VGSS
ID
ID(PK)
PD
Tstg
Tj
RJC
Drain Source Voltage
Gate Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation @ Tcase = 25°C
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction Case
160V 200V
±14V
32A
32A
500W
55 to 150°C
150°C
0.3°C/W



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