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Five Points

Parameter	Symbol	Values	Unit
Continuous drain current T=28	ID	12.5	A
Pulsed drain current T=25	Idpuls	50
Avalanche current,limited by Tjmax	Iar	12.5	MJ
Avalanche energy,periodic limited by Tjmax	Ear	13
Avalanche energy, single pulse	Eas
Id= 41 A, Vdd= 25 V, Rgs= 25
L = 249.9 H, Tj = 25 °C		570
Gate source voltage	Vgs	±20	V
Power dissipation T=25	Ptot	150	W
Operating temperature	Tj	55 ... + 150	C
Storage temperature	Tstg	55 ... + 150
Thermal resistance, chip case	RthJC	0.83	K/W
Thermal resistance, chip to ambient	RthJA	75
DIN humidity category, DIN 40 040		E
IEC climatic category, DIN IEC 68-1		55/150/56

* N channel
* Enhancement mode
* Avalanche-rated

BUZ10
PDF/DataSheet Download

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·BUZ101
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·BUZ101L
SIEMENS [Siemens Semiconductor Group]
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
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