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| Parameter | Symbol | Values | Unit |
| Continuous drain current T=28 | ID | 9 | A |
| Pulsed drain current T=25 | Idpuls | 36 | |
| Avalanche current,limited by Tjmax | Iar | 10 | MJ |
| Avalanche energy,periodic limited by Tjmax | Ear | 7.9 | |
| Avalanche energy, single pulse | Eas | ||
| Id= 41 A, Vdd= 25 V, Rgs= 25 | |||
| L = 249.9 H, Tj = 25 °C | 59 | ||
| Gate source voltage | Vgs | ±20 | V |
| Power dissipation T=25 | Ptot | 40 | W |
| Operating temperature | Tj | 55 ... + 150 | C |
| Storage temperature | Tstg | 55 ... + 150 | |
| Thermal resistance, chip case | RthJC | 0.83 | K/W |
| Thermal resistance, chip to ambient | RthJA | 75 | |
| DIN humidity category, DIN 40 040 | E | ||
| IEC climatic category, DIN IEC 68-1 | 55/150/56 | ||
BUZ10
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