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Part Number: BUZ 76

 

 

 

 

 

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BUZ 76 Maximum Ratings

Parameter Symbol Values Unit
Continuous drain current T=28 ID 3 A
Pulsed drain current T=25 Idpuls 12
Avalanche current,limited by Tjmax Iar 3MJ
Avalanche energy,periodic limited by Tjmax Ear 5
Avalanche energy, single pulse Eas
Id= 41 A, Vdd= 25 V, Rgs= 25 
L = 249.9 H, Tj = 25 °C 180
Gate source voltage Vgs ±20 V
Power dissipation T=25 Ptot 40 W
Operating temperature Tj 55 ... + 150 C
Storage temperature Tstg 55 ... + 150
Thermal resistance, chip case  RthJC 3.1 K/W
Thermal resistance, chip to ambient  RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/150/56

BUZ 76 Features

 *N channel
 *Enhancement mode
 * Avalanche-rated 
 

BUZ 76 Connection Diagram

BUZ 76  Connection Diagram

BUZ 76 datasheet

BUZ10
PDF/DataSheet Download

  • Datasheet: BUZ10
  • File Size: 135632 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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