Features: · Low switching losses· High breakdown voltage· Capability of absorbing very high surge current· Fast recovery time· Guard ring protected· Plastic SMD package.Application· Low power switched-mode power supplies· Rectifying· Polarity protection.Specifications SYMBOL PARAMETER CON...
BYG90-90: Features: · Low switching losses· High breakdown voltage· Capability of absorbing very high surge current· Fast recovery time· Guard ring protected· Plastic SMD package.Application· Low power switch...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VR | continuous reverse voltage | - | 90 | V | |
VRRM | repetitive peak reverse voltage | - | 90 | V | |
VRWM | crest working reverse voltage | 90 | |||
IF(AV) | average forward current | Tamb = 100 °C; see Fig.2; Rth j-a = 13.5 K/W; note 1; VR(equiv) = 0.2 V; note 2 |
- | 1 | A |
IFRM | repetitive peak forward current | t = 8.3 ms half sine wave; JEDEC method |
- | 30 | A |
IFSM | non-repetitive peak forward current | tp = 100 ms | - | 0.5 | A |
Tstg | storage temperature | -65 | +150 | °C | |
Tj | junction temperature | 1 | 150 | °C |
Notes
1. Refer to SOD106A standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request.