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BYM300A120DN2

IGBT Modules 1200V 300A F/DIODE

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SeekIC No. : 00141781 Detail

BYM300A120DN2: IGBT Modules 1200V 300A F/DIODE

BYM300A120DN2 Data Sheet

floor Price/Ceiling Price

US $ 60.71~67.46 / Piece | Get Latest Price
Part Number:
BYM300A120DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~6
  • 6~10
  • Unit Price
  • $67.46
  • $60.71
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Single
Power Dissipation : 1 KW Package / Case : 62 mm    

Description

Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Packaging :
Product : IGBT Silicon Modules
Configuration : Single
Power Dissipation : 1 KW
Package / Case : 62 mm


Specifications

Parameter Symbol Value Unit
Drain source voltage
Tj= 25 °C		 VR25 1200 V
DC current
TC = 25 °C
TC = 80 °C		 FDC 450
300		 A
Pulsed diode current, tp = 1 ms
TC = 25 °C
TC = 80 °C		 Fpuls 900
600
i 2t-value, tP = 10 ms
Tj= 0 °C		 òi 2t 42000 A2s
Power dissipation per diode
TC = 25 °C		 PD 1000 W
Chip temperature TJ + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 0.125 K/W
Insulation test voltage, t = 1min. Vis 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56



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