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BYV133F

Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRMVRWMVRIO(AV)IO(RMS)IFRMIFSMI2tIRRMIRSMTstgTj Repetitive peak reverse voltageCrest working reverse voltageContinuous reverse voltageAverage output current (bothdiodes conducting)RMS output current (bothdiode...

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BYV133F: Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRMVRWMVRIO(AV)IO(RMS)IFRMIFSMI2tIRRMIRSMTstgTj Repetitive peak reverse voltageCrest working reverse voltageC...

BYV133F Data Sheet

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Part Number:
BYV133F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VRWM
VR

IO(AV)

IO(RMS)

IFRM

IFSM

I2t
IRRM

IRSM

Tstg
Tj		 Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage

Average output current (both
diodes conducting)
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current, per diode

I2t for fusing
Repetitive peak reverse current
per diode.
Non-repetitive peak reverse
current per diode.
Storage temperature
Operating junction temperature
Ths 112 °C

square wave; = 0.5;
Ths 61 °C

t = 25 s; = 0.5;
Ths 61 °C
t = 10 ms
t = 8.3 ms
sinusoidal Tj = 125 °C prior
to surge; with reapplied
VRRM(max)
t = 10 s
tp = 2 s; = 0.001

tp = 100 s
-
-
-

-

-

-

-
-

-
-

-

65
-
-35
35
35
35
-40
40
40
40
-45
45
45
45
V
V
V

A

A

A

A
A

A2s
A

A

°C
°C
20

20

20

100
110

50
1

1

175
150



Description

Dual, low leakage, platinum barrier, schottky rectifier BYV133F diodes in a full pack plastic envelope featuring low forward voltage drop, absence of stored charge. and guaranteed reverse surge capability. BYV133F are intended foruse in switchedmode power supplies and high frequency circuits in general where low conduction and zero switching losses are important.




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