C2304

Features:

·  1800 to 4800 MHz RF
·  10 to 900 MHz IF
·  26 dB Gain, 4dB Noise Figure
·  Single 5V Supply
·  27 dBm Output IP3
· Separate RF AMP, MIXER/LO AMP and IF AMP cells.
·  75 ohm IF output impedance


Application

·  2.4 GHz ISM Band Applications
· MMDS Downconverters
·  Wireless Bridges
·  Wireless Local Loop Systems
·  S Band Receivers
· Wireless LANS and WANS
·  Point to Multipoint Receivers
·  2.4GHz Consumer Applications
·  Bluetooth Applications
·  Upconverters


Specifications

Characteristic	Symbol	Value	Units
Drain Voltage	VDD1,2	+8	V
Bias Current	IDS	200	mA
RF Input Power	PIN	+18	dBm
Power Dissipation	PDISS	1.0	W
Load VSWR	VSWR	10:1
Operating Temperature	TOP	-40 to +85	°C
Junction Temperature	TJ	150	°C
Storage Temperature Range	TSTG	-65 to +150	°C
Caution: Operating beyond specified rating for any of these parameters may cause permanent damage to the device.

Description

The C2304 is a flexible high intercept and high gain down conversion GaAs MMIC packaged in a compact 14 pin SOIC package. Each C2304 sub-circuit is brought out on separate pins to allow for custom filtering on the IF/RF mixer interstage or custom matching for specific bands. Broadband parallel feedback networks are used on the gain and LO driver stages and the mixer is a singly balanced, two diode type mixer. The C2304 FET source of the IF amplifier stage (IF BIAS) is accessible for AC bypassing which allows for current reduction with DC source degeneration. The gain and DC current is broken up as follows: RF AMP gain = 14dB, current = 22 mA; LO AMP gain = 11dB, current = 28ma; IF AMP gain = 18dB, current = 60 mA, MIXER conversion loss = -6dB. Simple external matching circuits can be implemented for all ports to achieve VSWR's <2:1 over moderate bandwidths of less than 400MHz.