CBAS17

Specifications SYMBOL UNITS Peak Repetitive Forward Current IFRM 250 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +150 Thermal Resistance JA 357 /WDescriptionThe CENTRAL SEMICONDUCTOR CBAS17 type is a planar ep...

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SeekIC No. : 004310833 Detail

CBAS17: Specifications SYMBOL UNITS Peak Repetitive Forward Current IFRM 250 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +150...

floor Price/Ceiling Price

Part Number:
CBAS17
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Specifications

  SYMBOL   UNITS
Peak Repetitive Forward Current IFRM 250 mA
Power Dissipation PD 350 mW
Operating and Storage      
Junction Temperature TJ,Tstg -65 to +150
Thermal Resistance JA 357 /W



Description

The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications.


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