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CEB21A3

Features: 30V , 20A , RDS(ON)=45m @VGS=10V.RDS(ON)=70m @VGS=4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handling capability.TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Vol...

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CEB21A3: Features: 30V , 20A , RDS(ON)=45m @VGS=10V.RDS(ON)=70m @VGS=4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handling capability.TO-220 & TO-263 package.Specifi...

CEB21A3 Data Sheet

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Part Number:
CEB21A3
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

30V , 20A , RDS(ON)=45m @VGS=10V.
RDS(ON)=70m @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.




Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous Pulsed ID 20 A
IDM 60 A
Drain-Source Diode Forward Current IS 20 A
Maximum Power Dissipation @Tc=25 Derate above 25 PD 43 W
0.29 W/
Operating and Storage Temperature Range TJ, TSTG -65 to 175



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