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CEB50N06

Features: 60V, 50A ,RDS(ON) = 17mW (typ) @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.TO-220 & TO-263 package.Lead free product is acquired.Specifications Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V ...

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CEB50N06: Features: 60V, 50A ,RDS(ON) = 17mW (typ) @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.TO-220 & TO-263 package.Lead free product is ...

CEB50N06 Data Sheet

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Part Number:
CEB50N06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

60V, 50A ,RDS(ON) = 17mW (typ) @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
TO-220 & TO-263 package.
Lead free product is acquired.




Specifications

Parameter Symbol Limit Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 50 A
Drain Current-Pulsed a IDM 150 A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C		 PD 131 W
0.88 W/ C
Single Pulsed Avalanche Energy d EAS 225 mJ
Single Pulsed Avalanche Current d IAS 50 A
Operating and Store Temperature Range TJ,Tstg 55 to 175 .C





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