Purchase CEB60N10, In-stock CEB60N10 From SeekIC.
MFG:CET Package Cooled:TO-263 D/C:09+
- Table of contents:
CEB60N10
-
Suppliers
DataSheet
General Description
CEB60N10 Maximum Ratings
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 100 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Drain Current-Continuous | ID | 60 | A |
| Drain Current-Pulsed a | IDM | 240 | A |
| Maximum Power Dissipation @T=25 Derate above 25 |
PD | 200 | W |
| 1.3 | W/ | ||
| Single Pulsed Avalanche Energy d | EAS | 148 | mJ |
| Single Pulsed Avalanche Current d | IAS | 46 | A |
| Operating and Storage Temperature Range | TJ, TSTG | -65 to 175 |
CEB60N10 Features
100V, 60A, RDS(ON) = 23.5mW @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
CEB60N10
PDF/DataSheet Download
- Datasheet: CEB60N10
- File Size: 100133 KB
- Manufacturer: CET [Chino-Excel Technology]
- Click here to Download
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