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CEB76139

Features: ·30V, 75A, RDS(ON) = 7mW @VGS = 10V.·Super high dense cell design for extremely low RDS(ON).·High power and current handing capability.·TO-220 & TO-263 package.·RDS(ON) = 10mW @VGS = 4.5V.·Lead free product is acquired.·100% avalanche tested.Specifications Parameter Symbol Lim...

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SeekIC No. : 004312705 Detail

CEB76139: Features: ·30V, 75A, RDS(ON) = 7mW @VGS = 10V.·Super high dense cell design for extremely low RDS(ON).·High power and current handing capability.·TO-220 & TO-263 package.·RDS(ON) = 10mW @VGS = 4...

CEB76139 Data Sheet

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Part Number:
CEB76139
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/16

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Product Details

Description



Features:

·30V, 75A, RDS(ON) = 7mW @VGS = 10V.
·Super high dense cell design for extremely low RDS(ON).
·High power and current handing capability.
·TO-220 & TO-263 package.
·RDS(ON) = 10mW @VGS = 4.5V.
·Lead free product is acquired.
·100% avalanche tested.




Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Drain Current-Pulsed a ID 75 A
Maximum Power Dissipation @ TC = 25
- Derate above 25 		IDM 225 A
Maximum Power Dissipation PD 75 W
0.5 W/
Single Pulsed Avalanche Energy d EAS 228 mJ
Single Pulsed Avalanche Current d IAS 100 A
Operating Junction and Storage Temperature Range TJ,TSTG -55 to 175





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