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CEF09N6

Features: 600V , 6A ,RDS(ON)= 1.2 @VGS=10V.Super high dense cell design for extremely low RDS(ON).High power and current handling capability.TO-220F full-pak for through hole.Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 ...

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CEF09N6: Features: 600V , 6A ,RDS(ON)= 1.2 @VGS=10V.Super high dense cell design for extremely low RDS(ON).High power and current handling capability.TO-220F full-pak for through hole.Specifications Par...

CEF09N6 Data Sheet

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Part Number:
CEF09N6
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

600V , 6A ,RDS(ON)= 1.2 @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole.


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
Drain Current-Continuous (Tc=25 )
-Pulsed		 ID 5 A
IDM 15 A
Drain-Source Diode Forward Current IS 5 A
Maximum Power Dissipation @Tc=25
Derate above 25 		PD 50 W
0.38 W/
Operating and Storage Temperature Range TJ, TSTG -55 to 15



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