CFH400

Continuous Drain Current : 70 mA
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : pHEMT
Drain Source Voltage VDS : 5.5 V
Gain : 15 dB
Frequency : 1.8 GHz
Gate-Source Breakdown Voltage : - 2 V
Power Dissipation : 150 mW
Forward Transconductance gFS (Max / Min) : 100 mS
Noise Figure : 0.55 dB
Package / Case : SOT343


Features:

• Low Noise figure and high associated gain for high IP3 receivers stages
• Frequencies to 4 GHz
• NF=0.55 dB; Ga=15.7 dB @ f=1.8 GHz, 3V, 10 mA
• Low cost miniature SOT343 package
• Lg = 0.4um; Wg = 400um
• Tape and reel packaging


Application

• PCS CDMA and UMTS Receivers
• WLAN Multicarrier Receivers
• Basestations


Specifications

Parameter	Symbol		Unit
Drain-source voltage	VDS	5.5	V
Drain-gate voltage	VDG	6.5
Gate-source voltage	VGS	-2.0
Drain current	ID	80	mA
Channel temperature	TCh	150	°C
Storage temperature range	Tstg	-65...+150
Total power dissipation (TS < tbd°C) 2	Ptot	150	mW

Description

The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. CFH400 is suitable for front-end applications to 4 GHz such as PCS CDMA and UMTS receivers, base stations LNAs, and WLAN front-ends. The device achieves a noise figure as low as 0.55 dB with 15 dB associated gain at 1.8 GHz. It is packaged in a low-cost SOT343 package and is 100% DC tested before packaging/RF LAT after packaging.

Parameters:

Technical/Catalog Information	CFH400
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Transistor Type	pHEMT FET
Voltage - Rated	5.5V
Current Rating	80mA
Package / Case	SC-70-4, SC-82AB, SOT-323-4, SOT-343
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	CFH400 CFH400