CFH800

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : pHEMT
Noise Figure : 0.5 dB
Drain Source Voltage VDS : 5.5 V
Frequency : 1.8 GHz
Gain : 17 dB
Forward Transconductance gFS (Max / Min) : 200 mS
Gate-Source Breakdown Voltage : - 2 V
Continuous Drain Current : 140 mA
Power Dissipation : 350 mW
Package / Case : SC70


Features:

` Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications (F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz)
` Low cost miniature package SOT343
` L<sub>G</sub> = 0.4m; W<sub>G</sub> = 800m
` Tape and Reel packaging

Specifications

Parameter	Symbol		Unit
Drain-source voltage	VDS	5.5	V
Drain-gate voltage	VDG	6.5	V
Gate-source voltage	VGS	-2.0	V
Drain current	ID	160	mA
Channel temperature	TCh	150	°C
Storage temperature range	Tstg	-65...+150	°C
Total power dissipation (TS < tbd°C) 2)	Ptot	350	mW

Parameters:

Technical/Catalog Information	CFH800
Vendor	Triquint Semiconductor Inc (VA)
Category	Undefined Category
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	CFH800 CFH800 779 1006 1 ND 77910061ND 779-1006-1