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CFS0303-SB

Features: · AIGaAs/InGaAs/AIGaAs PseudomorphicHigh Electron Mobility Transistor (pHEMT)· High Dynamic Range· Low Current and Voltage· Bias Point 3V and 60 mA· 0.3 dB Noise Figure at 2 GHz· 17 dBm P1dB at 2 GHz· 33 dBm OIP3 at 2 GHz· 600 m Gate Width: 50 Output Impedance· Excellent Uniformity· Low-...

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SeekIC No. : 004313135 Detail

CFS0303-SB: Features: · AIGaAs/InGaAs/AIGaAs PseudomorphicHigh Electron Mobility Transistor (pHEMT)· High Dynamic Range· Low Current and Voltage· Bias Point 3V and 60 mA· 0.3 dB Noise Figure at 2 GHz· 17 dBm P1...

CFS0303-SB Data Sheet

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Part Number:
CFS0303-SB
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· AIGaAs/InGaAs/AIGaAs Pseudomorphic
High Electron Mobility Transistor (pHEMT)
· High Dynamic Range
· Low Current and Voltage
· Bias Point 3V and 60 mA
· 0.3 dB Noise Figure at 2 GHz
· 17 dBm P1dB at 2 GHz
· 33 dBm OIP3 at 2 GHz
· 600 m Gate Width: 50 Output Impedance
· Excellent Uniformity
· Low-Cost, Surface-Mount Package (SOT-343)
· Ro-HS Compliant Construction
· Low Thermal Resistance: 98ºC/W




Application

· Low Noise Amplifiers and Oscillators Operating over the RF and Microwave Frequency Ranges
· Cellular/PCS/GSM/W-CDMA
· Mobile Handsets, Base Station Receivers and Tower-Mount Amplifiers
· Wimax, WLAN, LEO, GEO, WLL/RLL, GPS and MMDS Applications
· General Purpose Discrete pHEMT for Other Ultra Low-Noise and Medium Power Applications




Pinout

Connection Diagram




Specifications

Parameter Rating Parameter Rating Parameter Rating
Drain-Source Voltage 2 +5.5V Drain Current 2 Idss3 A Channel Temperature +175ºC
Gate-Source Voltage 2 -5.0V Total Pwr Dissipation 560W Storage Temperature -65ºC to +160ºC
Gate-Drain Voltage 2 -5.0V RF Input Power 17 dBm Thermal Resistance 98ºC/W
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage
2. Assumes DC quiescent conditions. RF OFF.
3. Vgs=0V




Description

Mimix's pHEMT technology is tested and proven in military, space and commercial applications. Mimix's proven workhorse, the CF003-03, has been fabricated in the Company's in-house foundry for over 19 years and is now available in packaged form as the CFS0303-SB.

The CFS0303-SB is a high dynamic range, lownoise, pHEMT packaged in a 4-lead SOT-343 surface-mount plastic package. CFS0303-SB is intended for many applications operating in the 0.1GHz to 10GHz frequency range.

Mimix's high performance packaged pHEMTs are ideal for use in all applications where low-noise figure, high gain, medium power and good intercept is required. The CFS0303-SB is the perfect solution for the first or second stage of a base station LNA due to the excellent combination of low-noise figure and linearity. CFS0303-SB is also well suited as a medium power driver stage in pole-top amplifiers and othertransmit functions, particularly as the low thermal resistance allows extended power dissipation when voltage and current are adjusted for increased power and linearity.






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