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Part Number: CHA3093c
Description: The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of a...
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CHA3093c
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DataSheet
General Description
CHA3093c General Description
The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process.
A B.I.T. ( Build In Test ) monitors a DC voltage that is representative of the microwave output power.
The circuit is manufactured with a PM-HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
CHA3093c Maximum Ratings
| Symbol | Parameter | Values | Unit |
| Vds | Drain bias voltage_small signal (2) | 4.0 | V |
| Ids | Drain bias current_small signal | 470 | mA |
| Vgs | Gate bias voltage | -2 to +0.4 | V |
| Vdg | Drain Gate voltage (Vds Vgs) | +5 | V |
| Pin | Maximum continuous input power (2) Maximum peak input power overdrive (3) |
+4 (@ 20GHz) -1 (@ 40GHz) +15 |
dBm dBm |
| Ta | Operating temperature range | -40 to +85 | |
| Tstg | Storage temperature range | -55 to +125 |
CHA3093c Features
·Broadband performances : 20-40GHz
·20dBm output power.
·22dB gain
·Very good broadband input matching
·On chip output power level DC detector
·Low DC power consumption, 330mA @ 3.5V
·Chip size : 0.83 X 1.72 X 0.10 mm
·20dBm output power.
·22dB gain
·Very good broadband input matching
·On chip output power level DC detector
·Low DC power consumption, 330mA @ 3.5V
·Chip size : 0.83 X 1.72 X 0.10 mm
CHA3093C
PDF/DataSheet Download
- Datasheet: CHA3093C
- File Size: 263923 KB
- Manufacturer: UMS [United Monolithic Semiconductors]
- Click here to Download
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