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Package Cooled:IGBT  

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Part Number: CHA5010b

 

 

Package Cooled: IGBT

 

Description: This CHA5010b is a two-stage monolithic driver amplifier.The circuit is manufactured with a standard MESFET pro...


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CHA5010b General Description


This CHA5010b is a two-stage monolithic driver amplifier.

The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

It is available in chip form.

CHA5010b Maximum Ratings

Symbol Parameter Values Unit
Vd Positive supply voltage Positive supply voltage V
Pdiss Maximum power dissipated 7.0 @ Ta = +25
4.3 @ Ta = +70		 W
Vg Negative supply voltage -3.5 to 0 V
Pin Maximum peak input power overdrive (2) +20 dBm
Ta Operating temperature range -25 to +70
Tstg Storage temperature range -55 to +125

CHA5010b Features

·Broadband performance : 9-10.5GHz
·27dBm output power (pulsed meas., -1dB gain compression)
·15dB gain
·± 1.5dB gain flatness
·Chip size : 2,09 x 1,27 x 0.10 mm

CHA5010b datasheet

CHA5010B
PDF/DataSheet Download

  • Datasheet: CHA5010B
  • File Size: 55296 KB
  • Manufacturer: UMS [United Monolithic Semiconductors]
  • Click here to Download

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