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CJD127

Specifications SYMBOL UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCBO 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 8.0 A Peak Collector Current ICM 16 A Base Current IB 120 mA Power Dissipation PD 2...

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CJD127: Specifications SYMBOL UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCBO 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 8....

CJD127 Data Sheet

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Part Number:
CJD127
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

  SYMBOL   UNITS
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 8.0 A
Peak Collector Current ICM 16 A
Base Current IB 120 mA
Power Dissipation PD 20 W
Power Dissipation (TA=25°C) PD 1.75 W
Operating and Storage      
Junction Temperature TJ,Tstg -65 to +150
Thermal Resistance JC 6.25 /W
Thermal Resistance JA 71.4 /W



Description

The  CENTRAL SEMICONDUCTOR  CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications.



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