CLY2

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : HEMT
Frequency : 1.8 GHz
Drain Source Voltage VDS : 9 V
Gate-Source Breakdown Voltage : - 6 V
Gain : 14.5 dB
Continuous Drain Current : 650 mA
Power Dissipation : 900 mW
Package / Case : MW-6


Features:

* Power amplifier for mobile phones
* For frequencies up to 3 GHz
* Operating voltage range: 2 to 6 V
* POUT at VD=3V, f=1.8GHz typ. 23.5 dBm
* High efficiency better 55 %


Pinout




Specifications

	Symbol		Unit
Drain-source voltage	VDS	9	V
Drain-gate voltage	VDG	12	V
Gate-source voltage	VGS	-6	V
Drain current	ID	600	mA
Channel temperature	TCh	150
Storage temperature	Tstg	-55...+150
Total power dissipation (TS < 50°C) 2)	Ptot	900	mW

Parameters:

Technical/Catalog Information	CLY2
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	CLY2 CLY2